, u na. 20 stern ave. springfield, new jersey 07081 usa silicon pnp power transistor telephone: (973) 376-2922 (212)227-6005 2SB860 description ? collector current: lc= -4a ? low collector saturation voltage : vce(sat)= -1.0v(max)@lc= -1a ? high collector power dissipation ? complement to type 2sd1137 applications ? designed for low frequency power amplifier applications. absolute maximum ratings(ta=25'c) symbol vcbo vceo vebo ic i cm pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak total power dissipation @ ta=25'c total power dissipation @ tc~25c junction temperature storage temperature range value -100 -100 -4 -4 -5 1.8 40 150 -45-150 unit v v v a a w c c - ?">. 2 w > pih: 1 b?e , 2 collector ? ' 3 emitter " -" to-220c package u 1 a "" " i i * h -? b *? ?* v h rkyl --? t k t 1 h c * k 1 v , dik a b c lj f g h j k i a r s u v ' l q mm min 15,50 9.90 4.20 0.70 3.40 4.98 2 68 0.44 13. 00 1.10 2.70 2.30 1.29 6.45 8.66 max 15.90 10,20 4,50 0.90 3,70 5.18 2.90 0,60 13.40 1.45 2.90 2.70 1,35 6.65 8.86 ??llmm) ri ^i ??'??? n.i semi-c'iinductors reserves the right to change test conditions, parameter limits and package dimensions \\ithont noiiee. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of nuiii to press, i louever. n.i semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i semi-conduciors enauiraues customers to verily that datasheets ;)re current before plncinji orders. quality -semi-conductors
silicon pnp power transistor 2SB860 electrical characteristics tc=25c unless otherwise specified symbol v(br)ceo v(br)ebo vce(sat) iceo iebo hpe-1 hfe-2 parameter collector-emitter breakdown voltage emitter-base breakdown voltage collector-emitter saturation voltage collector cutoff current collector cutoff current dc current gain dc current gain conditions lc= -10ma; rbe= le=-1ma;lc=0 ic=,1a; ib=-0.1a vce= -80v; rbe= veb= -3.5v; lc= 0 lc= -0.5a; vce= -4v lc= -50ma; vce= -4v min -100 -4 50 25 typ. max -1.0 -100 -50 250 350 unit v v v u a u a
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